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  regarding the change of names mentioned in the document, such as hitachi electric and hitachi xx, to renesas technology corp. the semiconductor operations of mitsubishi electric and hitachi were transferred to renesas technology corporation on april 1st 2003. these operations include microcomputer, logic, analog and discrete devices, and memory chips other than drams (flash memory, srams etc.) accordingly, although hitachi, hitachi, ltd., hitachi semiconductors, and other hitachi brand names are mentioned in the document, these names have in fact all been changed to renesas technology corp. thank you for your understanding. except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. renesas technology home page: http://www.renesas.com renesas technology corp. customer support dept. april 1, 2003 to all our customers
cautions keep safety first in your circuit designs! 1. renesas technology corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas technology corporation or a third party. 2. renesas technology corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by renesas technology corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact renesas technology corporation or an authorized renesas technology corporation product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by renesas technology corporation by various means, including the renesas technology corporation semiconductor home page (http://www.renesas.com). 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. renesas technology corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact renesas technology corporation or an authorized renesas technology corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. the prior written approval of renesas technology corporation is necessary to reprint or reproduce in whole or in part these materials. 7. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. 8. please contact renesas technology corporation for further details on these materials or the products contained therein.
HA12231FP audio signal processor for car deck (pb 1 chip) ade-207-327a (z) 2nd edition jan. 2001 description HA12231FP is silicon monolithic bipolar ic providing pb equalizer system and music sensor system in one chip. functions ? pb equalizer 2 channel ? music sensor 1 channel ? line amp. 2 channel ? line mute 2 channel features ? no use external parts for pb equalizer. (fixed characteristics built-in) ? available to change music sensing level by external resistor. ? available to change frequency response of music sensor by external capacitor. ? different type of pb equalizer characteristics selection (120 s/70 s) is available. ? line mute on/off is avalable. ? this ic is strong for a cellular phone noise. ordering information functions product package pbout-level pb-eq music sensor mute HA12231FP fp-20da 450 mvrms ? ? ?
HA12231FP rev.1, jan. 2001, page 2 of 2 pin description, equivalent circuit (v cc = 9 v, a system of single supply voltage, ta = 25 c, no signal, the value in the table shows typical value.) pin no. pin name note equivalent circuit description 16 tai(l) 5 tai(r) v = v cc /2 v cc /2 v 100 k tape input 14 rip v = v cc /2 gnd v cc v ripple filter 13 ms det v = v cc gnd time constant pin for rectifier 15 pbout(l) 6 pbout(r) v = v cc /2 v cc gnd v pb output 1 vref v = v cc /2 reference output 17 eqout(l) 4 eqout(r) v = v cc /2 v cc gnd v equalizer output (120 ) note: ms: music sensor
HA12231FP rev.1, jan. 2001, page 3 of 3 pin description, equivalent circuit (v cc = 9 v, a system of single supply voltage, ta = 25 c, no signal, the value in the table shows typical value.) (cont.) pin no. pin name note equivalent circuit description 11 v cc ? power supply 19 fin(l) 18 rin(l) 3 rin(r) 2 fin(r) ? v equalizer input 9 mute 10 for /rev 8 120 /70 ? 22 k gnd 100 k mode control input 12 ms ? i 100 k 200 ms v cc d gnd ms output (to mpu) * 7 ms g v v = v cc /2 v 90 k ms gain pin * 20 gnd ? gnd pin note: ms: music sensor
HA12231FP rev.1, jan. 2001, page 4 of 4 block diagram + ? + 20 19 18 17 16 15 14 ms 13 12 11 1 pbout(r) v cc dv cc ms ms det rip pbout(l) tai(l) eqout(l) rin(l) fin(l) gnd vref 2 3 4 5 fin(r) rin(r) eqout(r) tai(r) ms g v 6 7 8 9 120 /70 mute for /rev 10 ? + lpf rect i.a. ma s/r + + i.a. ? +
HA12231FP rev.1, jan. 2001, page 5 of 5 absolute maximum ratings (ta = 25 c) item symbol rating unit note supply voltage v cc max 15 v power dissipation pd 400 mw ta 85 c operating temperature topr ? 40 to +85 c storage temperature tstg ? 55 to +125 c
HA12231FP rev.1, jan. 2001, page 6 of 6 electrical characteristics item symbol test condition application terminal ic condition input specification output quiescent current input amp. gain channel separation pb-eq gain i q signal handling g v ia vomax t.h.d. thd g v eq 1k g v eq 10k(1) g v eq 10k(2) pb-eq maximum output v om (ta = 25 c, v cc = 9 v, pbout level = 450 mvrms (= 0 db)) v ih pb-eq thd noise voltage level converted in input thd-eq vn ms sensing level ms output leak current mute attenuation control voltage v on ms output low level v ol ct rl i oh mute v il note: 1. v cc = 7.2 v min 22.5 12.0 ? 50.0 37.0 33.0 29.0 300 ? 3.5 ? ? ? 18.0 ? ? 70.0 ? 0.2 typ 23.5 13.0 0.05 60.0 40.0 36.0 32.0 600 6.0 ? 0.1 1.2 ? 14.0 1.0 0.0 80.0 ? r 5 2 2/3 2 2 2/3 ? 2/3 2/3 5 5 ? 5 ? l 16 19 19/18 19 19 ? 19/18 19/18 16 16 ? 16 ? r 6 6 15 4 4 4 19/18 417 ? 4 4 6 6 12 6 ? l 15 516615 516615 15 6 17 17 17 ? 17 17 15 15 12 15 ? ? ? ? ? ? ? ? ? 11 ? ? 12 12 ? ? 8, 9, 10 max 24.5 ? 0.3 ? 43.0 39.0 35.0 ? 9 v cc 0.5 2.0 ? 10.0 1.5 2.0 ? 1.0 unit re- mark ? 1 ? 1 ma db a db v % mvrms db db db db % db db v vrms fin(hz) other no signal thd = 1% rg = 680 ? , din-audio filter tai tai ? tai fin fin/rin fin fin fin/rin 0 ? 0 12 0 0 0 ? 120 s 120 s 70 s thd = 1% ? no signal fin/rin fin/rin 0 (0) tai tai ? tai ? ? 0 ? 12 ? input pbout pbout ? pbout pbout eqout eqout eqout eqout eqout eqout pbout msout pbout msout msout pbout ? output 1k 1k ? 1k 1k 1k 10k 10k 1k 1k (1k) 5k 5k ? 1k ? pbout level(db)
HA12231FP rev.1, jan. 2001, page 7 of 7 test circuit + ? + 20 19 18 17 16 15 14 ms 13 12 11 1 pbout(r) v cc ms ms det rip pbout(l) tai(l) eqout(l) rin(l) fin(l) gnd vref 2 3 4 5 fin(r) rin(r) eqout(r) tai(r) ms g v 6 7 8 9 120 /70 mute for /rev 10 ? + lpf r4 5.1k r6 10k r5 10k pb eq c2 22 c3 0.1 c12 0.1 r2 680 sw5 fin sw9 sw7 lch rch sw12 r3 5.1k r12 5.1k r13 5.1k r10 10k sw6 sw8 pb eq rect i.a. r7 24k ma + i.a. ? + + c1 22 r1 680 r15 680 r14 680 r9 330k r8 3.9k r11 10k + c4 0.47 + c5 2.2 c10 2.2 + c6 0.01 rin rch sw4 lch tai fin rin sw3 tai 120 70 ext pbl ms pbr sw13 sw10 off on ext sw2 off on sw1 sw11 for rev ext notes: 1. resistor tolerance 1% 2. capacitor tolerance 1% 3. unit r: ? , c: f audio sg dc source1 dc source2 dc source3 dc vm ac vm1 + + + c9 1 c7 100 c8 0.33 c11 0.47 + c13 22 c14 22 distortion analyzer oscillo scope noise meter noise meter with ccir/arm filter and din/audio filter ac vm2
HA12231FP rev.1, jan. 2001, page 8 of 8 functional description power supply range HA12231FP is designed to operate on single supply only. table 1 supply voltage range product single supply HA12231FP 7.2 v to 12.0 v reference voltage HA12231FP provides the reference voltage of half the supply voltage that is the signal grounds. as the peculiarity of this device, the capacitor for the ripple filter is very small about 1/100 compared with their usual value. the block diagram is shown as figure 1. ? + ? + 1 11 v cc rip c1 1 14 + 20 to line amp. vref ms block : internal reference voltage figure 1 the block diagram of reference supply voltage
HA12231FP rev.1, jan. 2001, page 9 of 9 operating mode control HA12231FP provides fully electronic switching circuits. and each operating mode control are controlled by parallel data (dc voltage). when a power supply of this ic is cut off, for a voltage, in addition to a mode control terminal even though as do not destruct it, in series for resistance. table 2 threshold voltage (v th ) pin no. lo hi unit test condition 8, 9, 10 ? 0.2 to 1.0 3.5 to v cc v input pin measure v table 3 switching truth table pin no. pin name low high 8 120 /70 120 (normal) 70 (metal or chrome) 9 mute mute off mute on 10 for /rev forward reverse notes: 1. each pins are on pulled down with 100 k ? internal resistor. therefore, it will be low-level when each pins are open. 2. over shoot level and under shoot level of input signal must be the standardized. (high: v cc , low: ? 0.2 v) 3. reducing pop noise is so much better for 10 k ? to 22 k ? resisitor and 1 f to 22 f capacitor shown figure 2. input pin 1 to 22 f mpu 10 to 22 k ? + figure 2 interface for reduction of pop noise
HA12231FP rev.1, jan. 2001, page 10 of 10 input block diagram and level diagram the each level shown above is typical value when offering pbout level to pbout pin. (eq amp. gv = 40 db, f = 1 khz) ? + eq amp. the other channel c1 0.1 f input amp. 60mvrms ( ? 22.2dbs) eqout tai 30mvrms ( ? 28.2dbs) fin pbin 0.6mvrms (? 62.2dbs) rin vref pbout level HA12231FP: 450 mvrms ( ? 4.7 dbs) 0db pbout mute ? + r2 5.1k ? 23.5db r1 5.1k ? figure 3 input block diagram adjustment of playback reference operate level after replace r1 and r2 with a half-fix volume of 10 k ? , adjust playback reference operate level.
HA12231FP rev.1, jan. 2001, page 11 of 11 the sensitivity adjustment of music sensor adjusting ms amp. gain by external resistor, the sensitivity of music sensor can set up. the music sensor block diagram is shown in figure 4, and frequency response is shown in figure 5. ? + tai(l) tai(r) c1 0.33 f r1 330k ? ms ms amp. 23.5db cex2 rex2 rex1 ms det ms gv 66.7k ? 90k ? cex1 + lpf rect v cc s/r dv cc 25khz ? 6db 23.5db + gnd r l micro computer 16 7 13 12 20 5 33.3k ? ? 3.5db figure 4 music sensor block diagram g v2 g v1 10 100 k 25k 10k 1k f 3 f 4 f 2 f 1 f (hz) g v (db) 100 repeat mode (rep) search mode (ser) figure 5 frequency response
HA12231FP rev.1, jan. 2001, page 12 of 12 1. search mode g v1 = (23.5db ? 3.5db) + 20log 1 + [db] 90k rex2 f 1 = [hz], f 2 = 25k [hz] 1 2 ? cex2 ? rex2 2. repeat mode g v2 = (23.5db ? 3.5db) + 20log 1 + [db] 90k rex1 f 3 = [hz], f 4 = 25k [hz] 1 2 ? cex1 ? rex1 the sensitivity of music sensor (s) is computed by the formula mentioned below. s = 12.7 ? g v [db] s is 6 db down in case of one-side channel. notes: 1. search mode: g v1 , repeat mode: g v2 2. standard level of tai pin (dolby level correspondence) = 30 mvrms 3. standard sensing level of music sensor = 130 mvrms item rex1, 2 cex1, 2 g v1, 2 f 1, 3 f 2, 4 s (one side channel) s (both channel) search mode 24 k ? 0.01 f 33.5 db 663 hz 25 khz ? 14.8 db ? 20.8 db repeat mode 2.4 k ? 1 f 51.7 db 66.3 hz 25 khz ? 33.0 db ? 39.0 db note: this ms presented hysteresis lest ms(out) terminal should turn over again high level or low level, in case of thresh s level constantly. music sensor time constant 1. sensing no signal to signal (attack) is determined by c1, 0.01 f to 1 f capacitor c1 can be applicable. 2. sensing signal to no signal (recovery) is determined by c1 and r1, however preceding (1), 100 k ? to 1 m ? can be applicable. music sensor output (ms(out)) as for the internal circuit of music sensor block, music sensor output pin is connected to the collector of npn type directly, therefore, output level will be ?high? when sensing no signal. and output level will be ?low? when sensing signal. i l = * ms(out) lo : sensing signal (about 1v) dv cc ? ms(out) lo * r l note: supply voltage of ms(out) pin must be less than v cc voltage.
HA12231FP rev.1, jan. 2001, page 13 of 13 characteristic curves transmission frequency (mhz) eqout noise output vs. transmission frequency eqout noise output (dbs) 0 ? 20 ? 10 ? 30 ? 40 ? 50 ? 60 100 10000 1000 eqout(l), v cc = 9 v, vin = 0 dbm, 120 s toward cellular phone noise fin(l) rin(l) high frequency input vin (dbm) eqout noise output vs. transmission signal input level eqout noise output (dbs) 0 ? 20 ? 10 ? 30 ? 40 ? 60 ? 80 ? 70 ? 50 ? 50 ? 40 ? 30 ? 10 0 10 20 ? 20 eqout(l), v cc = 9 v, 120 s, f = 900 mhz toward cellular phone noise fin(l) rin(l)
HA12231FP rev.1, jan. 2001, page 14 of 14 frequency (hz) input amp. gain vs. frequency gain (db) 25 15 20 10 5 0 10 100 1k 100k 1m 10k supply voltage (v) quiescent current vs. supply voltage quiescent current (ma) 7.0 6.0 6.5 5.5 5.0 4.0 4.5 4 6 10 12 14 16 8 no signal 70 v cc = 9 v, tai pbout
HA12231FP rev.1, jan. 2001, page 15 of 15 output level vout (db) total harmonic distortion vs. output level t.h.d. (%) 10 1 0.01 0.1 ? 15 ? 10 ? 5 5 10 15 20 0 frequency (hz) total harmonic distortion vs. frequency t.h.d. (%) 1 0.1 0.01 0.001 10 100 1k 100 k 10k tai pbout, 0 db = 450 mvrms, v cc = 9 v, mute off ? 10 db 0 db 10 db tai pbout, 0 db = 450 mvrms, v cc = 9 v, mute off 100 hz 1 khz 10 khz (30 khz lpf) (400 hz hpf + 30 khz lpf) (400 hz hpf + 80 khz lpf) 30 khz lpf 400 hz hpf + 30 khz lpf 400 hz hpf + 80 khz lpf
HA12231FP rev.1, jan. 2001, page 16 of 16 supply voltage (v) 1 0.1 0.01 0.001 4 6 8 10 12 16 14 supply voltage (v) signal handling vomax (db) 30 25 20 10 0 5 15 4 6 10 12 14 16 8 tai pbout, 0 db = 450 mvrms, mute off, f = 1 khz, t.h.d. = 1% pbout(l) pbout(r) tai pbout = 450 mvrms, mute off 100 hz 1 khz 10 khz (30 khz lpf) (400 hz hpf + 30 khz lpf) (400 hz hpf + 80 khz lpf) total harmonic distortion vs. supply voltage t.h.d. (%)
HA12231FP rev.1, jan. 2001, page 17 of 17 70 50 60 40 20 0 10 30 fin eqout, v cc = 9 v 120 70 equalizer amp. gain vs. frequency eq gain (db) frequency (hz) 10 100 1k 100 k 10k supply voltage (v) signal to noise ratio vs. supply voltage signal to noise ratio (db) 70 65 60 50 40 45 55 4 6 10 12 14 16 8 fin eqout, vout = 0 db = 60 mvrms, din-audio filter 120 s 70 s
HA12231FP rev.1, jan. 2001, page 18 of 18 10 1 0.1 0.01 fin eqout, vout = +20 db, 0 db = 60 mvrms 120 s 70 s total harmonic distortion vs. frequency t.h.d. (%) frequency (hz) 100 1k 100 k 10k 30 khz lpf 400 hz hpf + 30 khz lpf 400 hz hpf + 80 khz lpf 100 1 10 0.1 0.01 fin eqout, 0 db = 60 mvrms, v cc = 9 v total harmonic distortion vs. output level (120 s) t.h.d. (%) output level vout (db) ? 510 35 30 25 15 5 0 20 100 hz 1 khz 10 khz (30 khz lpf) (400 hz hpf + 30 khz lpf) (400 hz hpf + 80 khz lpf)
HA12231FP rev.1, jan. 2001, page 19 of 19 100 1 10 0.1 0.01 fin eqout, 0 db = 60 mvrms, v cc = 9 v total harmonic distortion vs. output level (70 s) t.h.d. (%) output level vout (db) ? 510 35 30 25 15 5 0 20 100 hz 1 khz 10 khz (30 khz lpf) (400 hz hpf + 30 khz lpf) (400 hz hpf + 80 khz lpf) supply voltage (v) 10 1 0.1 0.01 4 6 8 10 12 16 14 fin eqout, vout = 60 mvrms, v cc = 9 v 100 hz 1 khz 10 khz (30 khz lpf) (400 hz hpf + 30 khz lpf) (400 hz hpf + 80 khz lpf) total harmonic distortion vs. supply voltage (120 s) t.h.d. (%)
HA12231FP rev.1, jan. 2001, page 20 of 20 supply voltage (v) 10 1 0.1 0.01 4 6 8 10 12 16 14 fin eqout, vout = 60 mvrms, v cc = 9 v 100 hz 1 khz 10 khz (30 khz lpf) (400 hz hpf + 30 khz lpf) (400 hz hpf + 80 khz lpf) total harmonic distortion vs. supply voltage (70 s) t.h.d. (%) supply voltage (v) signal handling vomax (db) 45 40 35 25 15 20 30 4 6 10 12 14 16 8 fin, rin eqout, 120 s, 0 db = 60 mvrms, f = 1 khz, t.h.d. = 1% fin rin
HA12231FP rev.1, jan. 2001, page 21 of 21 fin pbout, vout = 12 db (0 db = 450 mvrms), 80 khz lpf l r r l crosstalk vs. frequency (ctrl) supply voltage (v) signal handling vomax (db) 45 40 35 25 15 20 30 4 6 10 12 14 16 8 fin, rin eqout, 70 s, 0 db = 60 mvrms, f = 1 khz, t.h.d. = 1% fin rin frequency (hz) 10 100 1k 100 k 10k 0 ? 20 ? 30 ? 10 ? 40 ? 60 ? 80 ? 70 ? 50 crosstalk (db)
HA12231FP rev.1, jan. 2001, page 22 of 22 ms amp. sensitivity vs. frequency frequency (hz) 10 100 1k 100 k 10k 10 0 ? 20 ? 30 ? 10 ? 40 ms sensing level (db) rin pbout, vout = 12 db (0 db = 450 mvrms), 80 khz lpf l r r l crosstalk vs. frequency (ctrl) frequency (hz) 10 100 1k 100 k 10k 0 ? 20 ? 30 ? 10 ? 40 ? 60 ? 80 ? 70 ? 50 crosstalk (db) tai pbout, v cc = 9 v, 0 db = 450 mvrms ser l h ser h l rep l h rep h l
HA12231FP rev.1, jan. 2001, page 23 of 23 resistance r10 ( ? ) no-signal sensing time vs. resistance no-signal sensing time (ms) 1000 10 100 1 10m 100k 1m 10k pbout msout 1000 10 100 0.1 1 capacitance c8 ( f) signal sensing time vs. capacitance signal sensing time (ms) 0.001 0.01 10 1 0.1 pbout msout tai pbout, v cc = 9 v, f = 5 khz, msout l h ser 0 db tai pbout, v cc = 9 v, f = 5 khz, msout h l ser 0 db
HA12231FP rev.1, jan. 2001, page 24 of 24 package dimensions hitachi code jedec jeita mass (reference value) fp-20da ? conforms 0.31 g *dimension including the plating thickness base material dimension *0.42 0.08 0.12 0.15 m 20 10 1 *0.22 0.05 0.80 max 11 12.6 5.5 2.20 max 13 max 0 ? ? 8 ? 0.70 0.20 + 0.20 ? 0.30 7.80 1.27 0.10 0.10 1.15 0.40 0.06 0.20 0.04 as of july, 2002 unit: mm
HA12231FP rev.1, jan. 2001, page 25 of 25 disclaimer 1. hitachi neither warrants nor grants licenses of any rights of hitachi?s or any third party?s patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party?s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi?s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi?s sales office for any questions regarding this document or hitachi semiconductor products. sales offices hitachi, ltd. semiconductor & integrated circuits nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2002. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00 singapore 049318 tel : <65>-6538-6533/6538-8577 fax : <65>-6538-6933/6538-3877 url : http://semiconductor.hitachi.com.sg url http://www.hitachisemiconductor.com/ hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road hung-kuo building taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://semiconductor.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower world finance centre, harbour city, canton road tsim sha tsui, kowloon hong kong tel : <852>-2735-9218 fax : <852>-2730-0281 url : http://semiconductor.hitachi.com.hk hitachi europe gmbh electronic components group dornacher str 3 d-85622 feldkirchen postfach 201, d-85619 feldkirchen germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi europe ltd. electronic components group whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 778322 hitachi semiconductor (america) inc. 179 east tasman drive san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 7.0


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